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| (R) STPS3060CW POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS IF(AV) VRRM VF (max) FEATURES AND BENEFITS HIGH REVERSE VOLTAGE NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE 2 x15 A 60 V 0.65 V A1 K A2 A2 K A1 DESCRIPTION Dual center tap schottky rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in TO-247 this device is intended for use in high frequency inverters. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Peak repetitive reverse current Storage temperature range Maximum junction temperature Critical rate of rise reverse voltage Tc = 125C = 0.5 tp = 10 ms Sinusoidal tp = 2 s F = 1kHz Per diode Per diode Per device Per diode Per diode TO-247 Value 60 30 15 30 200 1 - 65 to + 150 150 10000 Unit V A A A A C V/s July 1998 - Ed: 2 1/4 STPS3060CW THERMAL RESISTANCES Symbol Rth(j-c) Rth(c) When the diodes 1 and 2 are used simultaneously : TJ(diode 1) = P(diode1) x Rth(Per diode) + P(diode 2) x Rth(c) ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS PER DIODE Symbol IR * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C Pulse test : * tp = 5 ms, < 2 % ** tp = 380 s, < 2% Parameter Junction to case Per diode total Coupling Value 1.6 0.9 0.15 Unit C/W C/W Min. Typ. Max. 30 Unit A mA V VR = VRRM 5 IF = 20 A IF = 20 A IF = 10 A 0.58 25 0.96 0.8 0.65 VF ** To evaluate the conduction losses use the following equation : P = 0.56 x IF(AV) + 0.0113 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). Fig. 2: Average current versus temperature( = 0.5) (per diode). ambient PF(av)(W) 16 14 12 10 8 6 4 2 0 0 2 4 6 IF(av) (A) 8 10 12 =tp/T T IF(av)(A) = 0.05 = 0.1 = 0.2 = 0.5 16 14 12 10 = 1 Rth(j-a)=15C/W Rth(j-a)=Rth(j-c) 8 6 4 T tp 2 16 0 0 =tp/T tp Tamb(C) 50 75 100 125 150 14 25 2/4 STPS3060CW Fig. 3: Non repetitive surge peak forward curren t versus overload duration (maximum values) (per diode). Fig. 4: Relative variation of thermal transient impedance junction to case versus pulse duration (per diode) . IM(A) 160 140 120 100 80 60 40 20 0 1E-3 IM t Zth(j-c)/Rth(j-c) 1.0 Tc= 50C Tc= 75C 0.8 0.6 0.4 0.2 Single pulse = 0.5 = 0.2 = 0.1 Tc= 110C T =0.5 t(s) 1E-2 1E-1 1E+0 0.0 1E-3 t(s) 1E-2 1E-1 =tp/T tp 1E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values) (per diode). Fig. 6: Junction capacitance versus reverse voltage applied (typical values) (per diode). IR(mA) 1E+1 Tj=125C C(pF) 1000 F=1MHz Tj=25C 1E+0 1E-1 1E-2 Tj=100C 500 Tj=75C Tj=50C 200 VR(V) VR(V) 40 45 50 55 60 100 1 2 5 10 20 60 1E-3 5 10 15 20 25 30 35 Fig. 7: Forward voltage drop versus forward current (maximum values) (per diode). VFM(V) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1 1 Tj=125C IFM(A) 10 100 200 3/4 STPS3060CW PACKAGE MECHANICAL DATA TO247 DIMENSIONS V REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. V Dia. H A L5 L L2 L4 F2 F3 V2 F(x3) G = = M E F4 L3 F1 L1 D A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 E 0.40 0.80 0.015 0.031 F 1.00 1.40 0.039 0.055 F1 3.00 0.118 F2 2.00 0.078 F3 2.00 2.40 0.078 0.094 F4 3.00 3.40 0.118 0.133 G 10.90 0.429 H 15.45 15.75 0.608 0.620 L 19.85 20.15 0.781 0.793 L1 3.70 4.30 0.145 0.169 L2 18.50 0.728 L3 14.20 14.80 0.559 0.582 L4 34.60 1.362 L5 5.50 0.216 M 2.00 3.00 0.078 0.118 V 5 5 V2 60 60 Dia. 3.55 3.65 0.139 0.143 Marking: STPS3060CW Cooling method : C Weight : 4.4 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 4/4 |
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